Introduction
Plasma FIB (P-FIB) is a potent and versatile tool and platform used in material characterization, sample preparation, and nanoscale machining. Although it leverages the traditional gallium-based FIB systems, a plasma ion source generates higher ion currents, enabling higher milling rates and the capability of working in larger areas. Plasma-FIB provides the precision cutting, polishing, and imaging of semiconductors and metals in biological tissues. Many of the diverse applications of plasma-FIB relate to the general sectors of material science, nanotechnology, and electronics.
Scope
FIB plasma serves various fields, including semiconductor manufacturing, material research, and failure analysis. The technique described here provides a method to study the microstructure of materials, defect analysis, and cross-sectional imaging in cases where classical FIB methods may not be acceptable due to general source limitations or stringent time constraints.
Plasma-focused ion beam offers a broader scope compared to standard FIB by:
- Handling larger volumes of material.
- Milling challenging materials like tungsten, nickel, or steel more efficiently.
- Providing improved sample preparation abilities for 3D tomography, SEM, and TEM.

Test Procedure
Plasma-Focused Ion Beam testing involves mounting a sample in a vacuum chamber to avoid ion-scattering processes. The plasma source consists of heavy ions, typically xenon or argon, which get ionized and accelerated toward the sample. Then, the focused ion beam is projected on selected sample portions using electrostatic or magnetic lenses. The material is taken away by the sputtering of the ion beam, with beam current, dwell time, and dose accurately controlled to give the desired depth and resolution. Real-time imaging, usually in Scanning Electron Microscopy, allows users to follow and refine such precision. Data acquisition for analysis or 3D Reconstruction takes place according to the application.
Read more: Focused Ion Beam SEM (FIB-SEM)
Sample Size and Result Analysis
The following are the technical specifications of Plasma FIB:
| Particulars | Details |
| Sample size | A few microns are used for small structures such as thin films or integrated circuit components, and several millimeters in width or thickness are used for bulkier materials like metals, ceramics, or composite samples. |
| Result | P-FIB produces highly detailed and precise data regarding the sample’s structure, composition, and topography. The data collected includes 3D reconstructions, high-resolution images, and material composition and phase distribution information. |
Pros and Cons of Plasma FIB (P-FIB)
The following are the limitations and advantages of Plasma FIB
| Limitations | Advantages |
| Vacuum compatibility is typically required | The best method to cross-section small targets |
| The cross-section area is small | Rapid, high-resolution imaging |
| Ion beam damage may limit image resolution | Good grain contrast imaging |
| Imaging may spoil subsequent analyses | Versatile platform that supports many other tools |
Applications of Plasma FIB (P-FIB)
- Plasma-focused ion beams are potent tools for semiconductor development, materials science, high-precision milling, imaging, and analysis.
- P-FIB achieves a faster material removal rate over Gallium FIB than any other method today.
- Its primary application areas include preparing cross-sectional samples for electron microscopy, patterning for microelectronics, and nanostructuring.
- P-FIB is very useful in machining hard materials like metals, ceramics, and insulators, making it a popular technique for fast prototyping, failure analysis, and advanced materials studies.
Read more: Using FIB for Wafer Lot Acceptance and Design Verification
Conclusion
Plasma-FIB technology enables innovation for material analysis and nanofabrication. Further, the ability to mill materials faster than a traditional FIB system and Volume Electron Microscopy. Plasma-FIB is considerably modernizing those industries that operate based on the precision of the micro and nano levels. Whether semiconductor manufacturing, material research, or biological sciences, Plasma-FIB is versatile and efficient, from which no modern scientific investigation can be complete; its ability to deliver fast, precise, and high-resolution results across a wide range of materials. Further development of the technology will provide even more versatile applications and fine-tuned capabilities, further increasing horizons both for materials science and engineering. As advancements continue, it is poised to enhance further capabilities in nanoscale fabrication, failure analysis, and cross-sectional imaging.
At the core of this breadth is our network of 2,000+ accredited labs in the USA, offering access to over 10,000 test types. From advanced metrology (SEM, TEM, RBS, XPS) to mechanical, dielectric, environmental, and standardized ASTM/ISO testing, we give clients unmatched flexibility, specialization, and scale. You’re not limited by geography, facility, or methodology—Infinita connects you to the right testing, every time.
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FAQs
Plasma-focused ion beam milling scanning electron microscopy (plasma-FIB SEM) combines improved sputtering efficiency with nanometer imaging resolution at room temperature or under cryogenic conditions. This can provide fast-end pointing during 3D imaging.
Ga Ions used by DB FIB tend to attach to the sample surface; instead, Xe used by P FIB reduces sample contamination by Ga Ions. P FIB can run over large areas more than 20 times faster than DB FIB.
Focused ion beam, or FIB, is a site-specific material analysis, deposition, and ablation technique primarily employed in the semiconductor industry, materials research, and, increasingly, the biological area. An apparatus used in science that mimics an SEM is called a fiber optic bar (FIB) configuration.
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