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Rutherford Backscattering Spectrometry (RBS) is a widely used ion scattering analytical technique used to determine the elemental composition profile and depth of thin films. RBS is a non-destructive technique frequently used in a testing lab for thin-film semiconductor material stacks and for determining the concentration of trace elements heavier than the major constituents of the substrate.
Rutherford Backscattering Spectrometry (RBS) is a non-destructive elemental analysis technique frequently used for thin-film semiconductor material stacks. It is frequently used for quantitative compositional analysis of a sample, depth profiling of individual elements, and near-surface layer analysis of the samples. This information can be used to determine the quality of single-crystal substrate samples as well. Depth profiling characterization of films can be performed up to less than 1μm thick samples.
RBS test uses beams of high-energy helium ions (typically 0.5–4 MeV) directed onto a sample, which are repelled by the positively charged nucleus of atoms in the specimen. A solid-state detector measures the energy distribution and yield of backscattered ions from the sample which is used to obtain the elemental composition and depth profile.
Our well-equipped testing labs perform RBS test for our clients based in the USA and other parts of the world. We at Infinita Lab perform not only routine tests, but also custom tests designed in our laboratory as per the client’s specific requirements.
Rutherford Backscattering Spectrometry (RBS) Common Uses
Rutherford Backscattering Spectrometry (RBS) Advantages
Rutherford Backscattering Spectrometry (RBS) Limitations
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You can get Rutherford backscattering spectroscopy (RBS) done at Infinita Lab. Our well-equipped laboratories provide the RBS test efficiently to determine the structure and composition of materials.
Surface chemical analysis of materials using Rutherford backscattering spectroscopy (RBS) starts at $700/sample.
RBS is used for determining the structure and composition of materials. It is also used to determine the film density, thickness, and areal concentration of the sample. Single crystal substrate characterization is also possible with RBS.
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