Dopant and ultra-low concentration elemental analysis using Scanning Transmission Electron Microscopy (STEM) imaging and Electron Energy Loss Spectroscopy (EELS)
Modern nanoelectronic semiconductor device fabrication relies on the usage of finFETs transistors. STEM imaging and EELS mapping across the channel, perpendicular to the finFET plane, can provide crucial information regarding intermixing between layers, the integrity of the interfaces, and atomic density.